SI1072X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

93mOhm @ 1.3A, 10V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

FET Type :

N-Channel

Power Dissipation :

236μW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

236mW Ta

Min Operating Temperature :

-55°C

Drain to Source Resistance :

93mOhm

Turn-Off Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Resistance :

93mOhm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

6

Length :

1.7mm

Drain to Source Voltage (Vdss) :

30V

Package / Case :

SOT-563, SOT-666

Drain to Source Breakdown Voltage :

30V

Rise Time :

31ns

Supplier Device Package :

SC-89-6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Width :

1.2mm

Number of Channels :

1

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 15V

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Height :

600μm

Weight :

32.006612mg

Turn On Delay Time :

13 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

1.3A

Input Capacitance :

280pF

Fall Time (Typ) :

31 ns

RoHS Status :

ROHS3 Compliant

Rds On Max :

93 mΩ