SI1071X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Power Dissipation :

236mW

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 15V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Published :

2016

Mount :

Surface Mount

Power Dissipation-Max :

236mW Ta

Element Configuration :

Single

Number of Pins :

6

Terminal Finish :

MATTE TIN

Number of Terminations :

6

Rise Time :

25ns

RoHS Status :

ROHS3 Compliant

Resistance :

167mOhm

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

25 ns

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-960mA

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

36 ns

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

167m Ω @ 960mA, 10V

Threshold Voltage :

-1.45V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Vgs(th) (Max) @ Id :

1.45V @ 250μA

Pin Count :

6

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No