SI1071X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

236μW

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Drain to Source Resistance :

244mOhm

Width :

1.2mm

Element Configuration :

Single

Length :

1.7mm

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

960mA

Rds On Max :

167 mΩ

Rise Time :

25ns

Threshold Voltage :

-1.45V

Termination :

SMD/SMT

Package / Case :

SOT-563, SOT-666

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 15V

Resistance :

244mOhm

Dual Supply Voltage :

-30V

Max Operating Temperature :

150°C

Power Dissipation-Max :

236mW Ta

Turn-Off Delay Time :

36 ns

Gate to Source Voltage (Vgs) :

12V

Height :

600μm

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.45V @ 250μA

Supplier Device Package :

SC-89-6

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Nominal Vgs :

-1.45 V

Number of Channels :

1

Fall Time (Typ) :

25 ns

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Published :

2015

Weight :

32.006612mg

Input Capacitance :

315pF

Mount :

Surface Mount

Vgs (Max) :

±12V

Number of Pins :

6

Turn On Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

167mOhm @ 960mA, 10V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)