SI1069X-T1-E3
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- Mfr.Part #
- SI1069X-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 0.94A SC89-6
- Stock
- 43,387
- In Stock ：
- 43,387
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 184 mΩ
- Published :
- 2016
- Drain to Source Resistance :
- 268mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Drain to Source Breakdown Voltage :
- 20V
- Supplier Device Package :
- SC-89-6
- Vgs (Max) :
- ±12V
- Resistance :
- 184mOhm
- Turn-Off Delay Time :
- 23 ns
- Series :
- TrenchFET®
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 20V
- Fall Time (Typ) :
- 31 ns
- Rds On (Max) @ Id, Vgs :
- 184mOhm @ 940mA, 4.5V
- Power Dissipation :
- 236mW
- Package / Case :
- SOT-563, SOT-666
- FET Type :
- P-Channel
- Input Capacitance :
- 308pF
- Input Capacitance (Ciss) (Max) @ Vds :
- 308pF @ 10V
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 236mW Ta
- Continuous Drain Current (ID) :
- 940mA
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Rise Time :
- 31ns
- Gate Charge (Qg) (Max) @ Vgs :
- 6.86nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SI1069X-T1-E3
P-Channel Tape & Reel (TR) 184mOhm @ 940mA, 4.5V ±12V 308pF @ 10V 6.86nC @ 5V 20V SOT-563, SOT-666
SI1069X-T1-E3 Overview
A device's maximal input capacitance is 308pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 940mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 268mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).
SI1069X-T1-E3 Features
a continuous drain current (ID) of 940mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 268mOhm
a 20V drain to source voltage (Vdss)
SI1069X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1069X-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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