SI1067X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

236mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Package / Case :

SOT-563, SOT-666

Vgs (Max) :

±8V

Resistance :

150mOhm

Continuous Drain Current (ID) :

1.06A

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Input Capacitance :

375pF

Rds On Max :

150 mΩ

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 5V

Rise Time :

22ns

Supplier Device Package :

SC-89-6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 10V

Number of Channels :

1

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

20V

Width :

1.2mm

Published :

2016

Mount :

Surface Mount

Height :

600μm

Fall Time (Typ) :

22 ns

Drain to Source Breakdown Voltage :

-20V

Max Operating Temperature :

150°C

Length :

1.7mm

Rds On (Max) @ Id, Vgs :

150mOhm @ 1.06A, 4.5V

Turn-Off Delay Time :

48 ns

Drain to Source Resistance :

214mOhm

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

8V

Weight :

32.006612mg

Vgs(th) (Max) @ Id :

950mV @ 250μA

Packaging :

Tape and Reel (TR)