SI1065X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

27 ns

FET Type :

P-Channel

Package / Case :

SOT-563, SOT-666

Rds On Max :

156 mΩ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

480pF @ 6V

Continuous Drain Current (ID) :

1.18A

Drain to Source Breakdown Voltage :

-12V

Number of Channels :

1

Vgs(th) (Max) @ Id :

950mV @ 250μA

Weight :

32.006612mg

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 5V

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

13 ns

Drain to Source Voltage (Vdss) :

12V

Element Configuration :

Single

Resistance :

130mOhm

Width :

1.2mm

Operating Temperature :

-55°C~150°C TJ

Length :

1.7mm

Supplier Device Package :

SC-89-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

45 ns

Published :

2009

Vgs (Max) :

±8V

Power Dissipation :

236mW

Number of Pins :

6

Drain to Source Resistance :

204mOhm

Input Capacitance :

480pF

Rise Time :

27ns

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount

Power Dissipation-Max :

236mW Ta

Max Operating Temperature :

150°C

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Height :

600μm

Rds On (Max) @ Id, Vgs :

156mOhm @ 1.18A, 4.5V