SI1062X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Package / Case :

SC-89, SOT-490

Rds On (Max) @ Id, Vgs :

420m Ω @ 500mA, 4.5V

Number of Pins :

3

Threshold Voltage :

1V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Terminal Form :

Flat

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

2.7nC @ 8V

Fall Time (Typ) :

11 ns

Published :

2016

Vgs (Max) :

±8V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Number of Terminations :

3

Rise Time :

14ns

Power Dissipation-Max :

220mW Ta

Turn On Delay Time :

2 ns

Power Dissipation :

220mW

Transistor Application :

SWITCHING

Resistance :

420mOhm

JESD-609 Code :

e3

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Number of Channels :

1

Turn-Off Delay Time :

16 ns

REACH SVHC :

No SVHC

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Weight :

29.993795mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

530mA