SI1058X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

1.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.55V @ 250μA

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Published :

2009

Vgs (Max) :

±12V

Package / Case :

SOT-563, SOT-666

Series :

TrenchFET®

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Drain to Source Resistance :

91mOhm

Mounting Type :

Surface Mount

Rise Time :

20ns

Input Capacitance :

380pF

Power Dissipation-Max :

236mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 10V

Supplier Device Package :

SC-89-6

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 5V

Fall Time (Typ) :

20 ns

Rds On (Max) @ Id, Vgs :

91mOhm @ 1.3A, 4.5V

Max Operating Temperature :

150°C

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Rds On Max :

91 mΩ

Number of Pins :

6

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Turn On Delay Time :

8 ns