SI1056X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 5V

Pbfree Code :

yes

Rise Time :

19ns

Power Dissipation-Max :

236mW Ta

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Published :

2009

Turn On Delay Time :

6.8 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

950 mV

Drain to Source Breakdown Voltage :

20V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Form :

Flat

Radiation Hardening :

No

Pin Count :

6

FET Type :

N-Channel

Number of Pins :

6

Continuous Drain Current (ID) :

1.32A

Drain-source On Resistance-Max :

0.089Ohm

Vgs(th) (Max) @ Id :

950mV @ 250μA

Turn-Off Delay Time :

18 ns

JESD-609 Code :

e3

Element Configuration :

Single

Fall Time (Typ) :

19 ns

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Rds On (Max) @ Id, Vgs :

89m Ω @ 1.32A, 4.5V

Vgs (Max) :

±8V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount