SI1056X-T1-E3

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Mfr.Part #
SI1056X-T1-E3
Manufacturer
Vishay
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
MOSFET N-CH 20V 1.32A SC89-6
Stock
3,570
In Stock :
3,570

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Min Operating Temperature :
-55°C
Gate Charge (Qg) (Max) @ Vgs :
8.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 10V
Vgs (Max) :
±8V
Mounting Type :
Surface Mount
Supplier Device Package :
SC-89-6
Package / Case :
SOT-563, SOT-666
Width :
1.2mm
Rds On Max :
89 mΩ
Element Configuration :
Single
Weight :
32.006612mg
Drain to Source Resistance :
89mOhm
Operating Temperature :
-55°C~150°C TJ
Length :
1.7mm
Power Dissipation-Max :
236mW Ta
Number of Elements :
1
Rise Time :
19ns
Turn On Delay Time :
6.8 ns
Continuous Drain Current (ID) :
1.32A
Input Capacitance :
400pF
Drain to Source Voltage (Vdss) :
20V
Number of Pins :
6
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
89mOhm @ 1.32A, 4.5V
Height :
600μm
Gate to Source Voltage (Vgs) :
8V
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
18 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
950mV @ 250μA
RoHS Status :
ROHS3 Compliant
Published :
2016
Series :
TrenchFET®
Number of Channels :
1
Fall Time (Typ) :
19 ns
Max Operating Temperature :
150°C
Drain to Source Breakdown Voltage :
20V
Mount :
Surface Mount
Datasheets
SI1056X-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1056X-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-563, SOT-666, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Number of Channels:1, SI1056X-T1-E3 pinout, SI1056X-T1-E3 datasheet PDF, SI1056X-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1056X-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1056X-T1-E3


N-Channel Tape & Reel (TR) 89mOhm @ 1.32A, 4.5V ±8V 400pF @ 10V 8.7nC @ 5V 20V SOT-563, SOT-666

SI1056X-T1-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of 1.32A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 89mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

SI1056X-T1-E3 Features


a continuous drain current (ID) of 1.32A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 89mOhm
a 20V drain to source voltage (Vdss)


SI1056X-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1056X-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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