SI1056X-T1-E3
- Mfr.Part #
- SI1056X-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.32A SC89-6
- Stock
- 3,570
- In Stock :
- 3,570
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 8.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 10V
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- SC-89-6
- Package / Case :
- SOT-563, SOT-666
- Width :
- 1.2mm
- Rds On Max :
- 89 mΩ
- Element Configuration :
- Single
- Weight :
- 32.006612mg
- Drain to Source Resistance :
- 89mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 1.7mm
- Power Dissipation-Max :
- 236mW Ta
- Number of Elements :
- 1
- Rise Time :
- 19ns
- Turn On Delay Time :
- 6.8 ns
- Continuous Drain Current (ID) :
- 1.32A
- Input Capacitance :
- 400pF
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Pins :
- 6
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 89mOhm @ 1.32A, 4.5V
- Height :
- 600μm
- Gate to Source Voltage (Vgs) :
- 8V
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 950mV @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2016
- Series :
- TrenchFET®
- Number of Channels :
- 1
- Fall Time (Typ) :
- 19 ns
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Datasheets
- SI1056X-T1-E3
N-Channel Tape & Reel (TR) 89mOhm @ 1.32A, 4.5V ±8V 400pF @ 10V 8.7nC @ 5V 20V SOT-563, SOT-666
SI1056X-T1-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of 1.32A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 89mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI1056X-T1-E3 Features
a continuous drain current (ID) of 1.32A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 89mOhm
a 20V drain to source voltage (Vdss)
SI1056X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1056X-T1-E3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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