SI1054X-T1-GE3

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Mfr.Part #
SI1054X-T1-GE3
Manufacturer
Vishay
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
MOSFET N-CH 12V 1.32A SC89-6
Stock
26,245
In Stock :
26,245

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
1.32A
Max Operating Temperature :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Gate to Source Voltage (Vgs) :
8V
Input Capacitance (Ciss) (Max) @ Vds :
480pF @ 6V
Supplier Device Package :
SC-89-6
Mount :
Surface Mount
Turn-Off Delay Time :
37 ns
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
95mOhm @ 1.32A, 4.5V
Radiation Hardening :
No
FET Type :
N-Channel
Input Capacitance :
480pF
Rise Time :
13ns
Gate Charge (Qg) (Max) @ Vgs :
8.57nC @ 5V
Rds On Max :
95 mΩ
Drain to Source Voltage (Vdss) :
12V
Package / Case :
SOT-563, SOT-666
Drain to Source Breakdown Voltage :
12V
Power Dissipation :
236mW
Vgs(th) (Max) @ Id :
1V @ 250μA
Power Dissipation-Max :
236mW Ta
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Number of Pins :
6
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
5.5 ns
Vgs (Max) :
±8V
Published :
2013
Drain to Source Resistance :
95mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Mounting Type :
Surface Mount
Series :
TrenchFET®
Fall Time (Typ) :
13 ns
Datasheets
SI1054X-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1054X-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Mounting Type:Surface Mount, SI1054X-T1-GE3 pinout, SI1054X-T1-GE3 datasheet PDF, SI1054X-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1054X-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1054X-T1-GE3


N-Channel Tape & Reel (TR) 95mOhm @ 1.32A, 4.5V ±8V 480pF @ 6V 8.57nC @ 5V 12V SOT-563, SOT-666

SI1054X-T1-GE3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 480pF @ 6V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 1.32A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 12V, and this device has a drainage-to-source breakdown voltage of 12VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 37 ns.This device has a drain-to-source resistance of 95mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.For this transistor to work, a voltage 12V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.

SI1054X-T1-GE3 Features


a continuous drain current (ID) of 1.32A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 37 ns
single MOSFETs transistor is 95mOhm
a 12V drain to source voltage (Vdss)


SI1054X-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI1054X-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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