SI1051X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Rise Time :

36ns

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 4V

Turn-Off Delay Time :

52 ns

Radiation Hardening :

No

Element Configuration :

Single

Terminal Form :

Flat

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-8V

Gate Charge (Qg) (Max) @ Vgs :

9.45nC @ 5V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

7.2 ns

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

8V

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

P-Channel

Fall Time (Typ) :

36 ns

Pin Count :

6

Power Dissipation-Max :

236mW Ta

Mount :

Surface Mount

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

122m Ω @ 1.2A, 4.5V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Published :

2015

Continuous Drain Current (ID) :

1.2A

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Vgs (Max) :

±5V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-563, SOT-666