SI1050X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

1.34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Turn On Delay Time :

6.8 ns

Number of Channels :

1

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

8V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

5V

Weight :

32.006612mg

Vgs(th) (Max) @ Id :

900mV @ 250μA

Height :

600μm

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

86m Ω @ 1.34A, 4.5V

ECCN Code :

EAR99

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

11.6nC @ 5V

FET Type :

N-Channel

Number of Pins :

6

Drain to Source Voltage (Vdss) :

8V

Pbfree Code :

yes

Nominal Vgs :

5 V

Power Dissipation-Max :

236mW Ta

Published :

2014

Pulsed Drain Current-Max (IDM) :

6A

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Mount :

Surface Mount

Pin Count :

6

Turn-Off Delay Time :

26 ns

Transistor Application :

SWITCHING

Width :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

585pF @ 4V

Fall Time (Typ) :

35 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

1.34A Ta

Operating Temperature :

-55°C~150°C TJ

Length :

1.7mm

Vgs (Max) :

±5V

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Number of Elements :

1

Terminal Form :

Flat

Element Configuration :

Single