SI1046X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

950mV @ 250μA

Terminal Form :

Flat

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

0.606A

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

19 ns

Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

SC-89, SOT-490

Resistance :

420mOhm

Series :

TrenchFET®

Continuous Drain Current (ID) :

606mA

Number of Elements :

1

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

66pF @ 10V

Vgs (Max) :

±8V

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

1.49nC @ 5V

ECCN Code :

EAR99

Pin Count :

3

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

76 ns

JESD-30 Code :

R-PDSO-F3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

250mW Ta

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

420m Ω @ 606mA, 4.5V

Transistor Application :

SWITCHING

Rise Time :

19ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant