SI1046R-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

420m Ω @ 606mA, 4.5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

66pF @ 10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Turn-Off Delay Time :

76 ns

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

SC-75A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

FET Type :

N-Channel

Number of Elements :

1

Drain-source On Resistance-Max :

0.42Ohm

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

950mV @ 250μA

Terminal Finish :

PURE MATTE TIN

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

606mA

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Form :

Flat

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pin Count :

3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Terminal Position :

Dual

Rise Time :

19ns

Fall Time (Typ) :

19 ns

Vgs (Max) :

±8V

Power Dissipation :

250mW

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

1.49nC @ 5V

Power Dissipation-Max :

250mW Ta

ECCN Code :

EAR99