SI1039X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

165m Ω @ 870mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

16 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

870mA

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.87A

Turn-Off Delay Time :

30 ns

ECCN Code :

EAR99

Terminal Position :

Dual

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-12V

Drain to Source Voltage (Vdss) :

12V

Terminal Form :

Flat

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

870mA Ta

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Element Configuration :

Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Rise Time :

20ns

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW THRESHOLD

Published :

2013

Number of Terminations :

6

Power Dissipation-Max :

170mW Ta

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs (Max) :

±8V

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

FET Type :

P-Channel

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6