SI1032R-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

50 ns

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 4.5V

Additional Feature :

LOW THRESHOLD

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Packaging :

Tape and Reel (TR)

Length :

1.58mm

Turn-Off Delay Time :

50 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Contact Plating :

Tin

Terminal Position :

Dual

Element Configuration :

Single

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Form :

Gull wing

Width :

760μm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Fall Time (Typ) :

25 ns

Current - Continuous Drain (Id) @ 25°C :

140mA Ta

Number of Elements :

1

Series :

TrenchFET®

Continuous Drain Current (ID) :

200mA

Mounting Type :

Surface Mount

Power Dissipation :

250mW

Number of Pins :

3

Resistance :

5Ohm

Rise Time :

25ns

FET Type :

N-Channel

Vgs (Max) :

±6V

Height :

700μm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Threshold Voltage :

900mV

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

6V

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Power Dissipation-Max :

250mW Ta

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Package / Case :

SC-75A

Transistor Element Material :

SILICON

Number of Terminations :

3