SI1013X-T1-E3
- Mfr.Part #
- SI1013X-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 350MA SC89-3
- Stock
- 57,648
- In Stock :
- 57,648
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 450mV @ 250μA (Min)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 350mA, 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On Max :
- 1.2 Ω
- Turn On Delay Time :
- 5 ns
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2009
- Min Operating Temperature :
- -55°C
- Package / Case :
- SC-89, SOT-490
- Supplier Device Package :
- SC-89-3
- Width :
- 939.8μm
- Power Dissipation :
- 250mW
- Fall Time (Typ) :
- 11 ns
- Element Configuration :
- Single
- Length :
- 1.6764mm
- Drain to Source Breakdown Voltage :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 250mW Ta
- Continuous Drain Current (ID) :
- -350mA
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±6V
- Gate to Source Voltage (Vgs) :
- 6V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 4.5V
- FET Type :
- P-Channel
- Drain to Source Resistance :
- 1.2Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchFET®
- Rise Time :
- 9ns
- Resistance :
- 1.2Ohm
- Height :
- 787.4μm
- Turn-Off Delay Time :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Datasheets
- SI1013X-T1-E3
P-Channel Tape & Reel (TR) 1.2Ohm @ 350mA, 4.5V ±6V 1.5nC @ 4.5V 20V SC-89, SOT-490
SI1013X-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has -350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 6V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
SI1013X-T1-E3 Features
a continuous drain current (ID) of -350mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 1.2Ohm
a 20V drain to source voltage (Vdss)
SI1013X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1013X-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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