SI1013X-T1-E3

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Mfr.Part #
SI1013X-T1-E3
Manufacturer
Vishay
Package / Case
SC-89, SOT-490
Datasheet
Download
Description
MOSFET P-CH 20V 350MA SC89-3
Stock
57,648
In Stock :
57,648

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
Number of Pins :
3
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 350mA, 4.5V
Drain to Source Voltage (Vdss) :
20V
Rds On Max :
1.2 Ω
Turn On Delay Time :
5 ns
Operating Temperature :
-55°C~150°C TJ
Published :
2009
Min Operating Temperature :
-55°C
Package / Case :
SC-89, SOT-490
Supplier Device Package :
SC-89-3
Width :
939.8μm
Power Dissipation :
250mW
Fall Time (Typ) :
11 ns
Element Configuration :
Single
Length :
1.6764mm
Drain to Source Breakdown Voltage :
20V
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Lead Free :
Lead Free
Power Dissipation-Max :
250mW Ta
Continuous Drain Current (ID) :
-350mA
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±6V
Gate to Source Voltage (Vgs) :
6V
Gate Charge (Qg) (Max) @ Vgs :
1.5nC @ 4.5V
FET Type :
P-Channel
Drain to Source Resistance :
1.2Ohm
Current - Continuous Drain (Id) @ 25°C :
350mA Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchFET®
Rise Time :
9ns
Resistance :
1.2Ohm
Height :
787.4μm
Turn-Off Delay Time :
35 ns
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Max Operating Temperature :
150°C
Datasheets
SI1013X-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1013X-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SC-89, SOT-490, SI1013X-T1-E3 pinout, SI1013X-T1-E3 datasheet PDF, SI1013X-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1013X-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1013X-T1-E3


P-Channel Tape & Reel (TR) 1.2Ohm @ 350mA, 4.5V ±6V 1.5nC @ 4.5V 20V SC-89, SOT-490

SI1013X-T1-E3 Overview


The drain current is the maximum continuous current the device can conduct, and this device has -350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 6V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.

SI1013X-T1-E3 Features


a continuous drain current (ID) of -350mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 1.2Ohm
a 20V drain to source voltage (Vdss)


SI1013X-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1013X-T1-E3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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