SI1013R-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

9ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

150mW Ta

Terminal Finish :

Matte Tin (Sn)

Height :

700μm

Package / Case :

SC-75A

Published :

2001

Number of Pins :

3

Pbfree Code :

yes

Power Dissipation :

150mW

Mount :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Resistance :

1.2Ohm

Lead Free :

Lead Free

Additional Feature :

LOW THRESHOLD

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±6V

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

1

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Turn-Off Delay Time :

35 ns

Continuous Drain Current (ID) :

-400mA

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Length :

1.58mm

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

6V

REACH SVHC :

No SVHC

Fall Time (Typ) :

9 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Element Configuration :

Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Drain to Source Breakdown Voltage :

-20V

Threshold Voltage :

-450mV

Transistor Element Material :

SILICON

Pin Count :

3

Width :

760μm