SI1013R-T1-E3
- Mfr.Part #
- SI1013R-T1-E3
- Manufacturer
- Vishay
- Package / Case
- SC-75A
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 350MA SC75A
- Stock
- 27,460
- In Stock :
- 27,460
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2017
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Package / Case :
- SC-75A
- Vgs (Max) :
- ±6V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 150mW
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 450mV @ 250μA (Min)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 35 ns
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Drain to Source Resistance :
- 1.2Ohm
- Power Dissipation-Max :
- 150mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.2Ohm @ 350mA, 4.5V
- FET Type :
- P-Channel
- Length :
- 1.58mm
- Fall Time (Typ) :
- 9 ns
- Drain to Source Breakdown Voltage :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Rds On Max :
- 1.2 Ω
- Series :
- TrenchFET®
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Ta
- Mount :
- Surface Mount
- Width :
- 760μm
- Resistance :
- 1.2Ohm
- Gate to Source Voltage (Vgs) :
- 6V
- Turn On Delay Time :
- 5 ns
- Height :
- 700μm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 4.5V
- Supplier Device Package :
- SC-75A
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 9ns
- Continuous Drain Current (ID) :
- -350mA
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- SI1013R-T1-E3
P-Channel Tape & Reel (TR) 1.2Ohm @ 350mA, 4.5V ±6V 1.5nC @ 4.5V 20V SC-75A
SI1013R-T1-E3 Overview
Its continuous drain current is -350mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.2Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 6V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
SI1013R-T1-E3 Features
a continuous drain current (ID) of -350mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 1.2Ohm
a 20V drain to source voltage (Vdss)
SI1013R-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1013R-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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