SI1013R-T1-E3

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Mfr.Part #
SI1013R-T1-E3
Manufacturer
Vishay
Package / Case
SC-75A
Datasheet
Download
Description
MOSFET P-CH 20V 350MA SC75A
Stock
27,460
In Stock :
27,460

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2017
Max Operating Temperature :
150°C
Number of Elements :
1
Package / Case :
SC-75A
Vgs (Max) :
±6V
Mounting Type :
Surface Mount
Power Dissipation :
150mW
Min Operating Temperature :
-55°C
Vgs(th) (Max) @ Id :
450mV @ 250μA (Min)
Number of Pins :
3
Radiation Hardening :
No
Turn-Off Delay Time :
35 ns
Number of Channels :
1
Lead Free :
Lead Free
Element Configuration :
Single
Drain to Source Resistance :
1.2Ohm
Power Dissipation-Max :
150mW Ta
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 350mA, 4.5V
FET Type :
P-Channel
Length :
1.58mm
Fall Time (Typ) :
9 ns
Drain to Source Breakdown Voltage :
-20V
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Rds On Max :
1.2 Ω
Series :
TrenchFET®
Current - Continuous Drain (Id) @ 25°C :
350mA Ta
Mount :
Surface Mount
Width :
760μm
Resistance :
1.2Ohm
Gate to Source Voltage (Vgs) :
6V
Turn On Delay Time :
5 ns
Height :
700μm
Gate Charge (Qg) (Max) @ Vgs :
1.5nC @ 4.5V
Supplier Device Package :
SC-75A
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
9ns
Continuous Drain Current (ID) :
-350mA
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
20V
Datasheets
SI1013R-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI1013R-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-75A, Mounting Type:Surface Mount, Number of Pins:3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, SI1013R-T1-E3 pinout, SI1013R-T1-E3 datasheet PDF, SI1013R-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI1013R-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1013R-T1-E3


P-Channel Tape & Reel (TR) 1.2Ohm @ 350mA, 4.5V ±6V 1.5nC @ 4.5V 20V SC-75A

SI1013R-T1-E3 Overview


Its continuous drain current is -350mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.2Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 6V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI1013R-T1-E3 Features


a continuous drain current (ID) of -350mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 1.2Ohm
a 20V drain to source voltage (Vdss)


SI1013R-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1013R-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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