SI1012X-T1-GE3
- Mfr.Part #
- SI1012X-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 500MA SC89-3
- Stock
- 19,650
- In Stock :
- 19,650
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- SC-89, SOT-490
- Terminal Form :
- Flat
- Gate Charge (Qg) (Max) @ Vgs :
- 0.75nC @ 4.5V
- Turn On Delay Time :
- 5 ns
- Vgs (Max) :
- ±6V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- REACH SVHC :
- Unknown
- Factory Lead Time :
- 14 Weeks
- Width :
- 950μm
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 250mW Ta
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 250mW
- Fall Time (Typ) :
- 5 ns
- Published :
- 2012
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 600mA, 4.5V
- Turn-Off Delay Time :
- 25 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- Pbfree Code :
- yes
- Pin Count :
- 3
- Height :
- 800μm
- Series :
- TrenchFET®
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 1.7mm
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 600mA
- Drain to Source Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Resistance :
- 700mOhm
- Gate to Source Voltage (Vgs) :
- 6V
- Threshold Voltage :
- 900mV
- Rise Time :
- 5ns
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Additional Feature :
- LOW THRESHOLD
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 29.993795mg
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Datasheets
- SI1012X-T1-GE3

N-Channel Tape & Reel (TR) 700m Ω @ 600mA, 4.5V ±6V 0.75nC @ 4.5V SC-89, SOT-490
SI1012X-T1-GE3 Overview
This device's continuous drain current (ID) is 600mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 6V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 900mV threshold voltage.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
SI1012X-T1-GE3 Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 25 ns
a threshold voltage of 900mV
SI1012X-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1012X-T1-GE3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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