SI1012R-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

FET Type :

N-Channel

Additional Feature :

LOW THRESHOLD

Turn-Off Delay Time :

25 ns

JESD-609 Code :

e3

Package / Case :

SC-75A

REACH SVHC :

No SVHC

Height :

800μm

Power Dissipation :

150mW

Mounting Type :

Surface Mount

Resistance :

700mOhm

Vgs (Max) :

±6V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Width :

760μm

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drain to Source Breakdown Voltage :

20V

Rise Time :

5ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

150mW Ta

Drain Current-Max (Abs) (ID) :

0.5A

Terminal Form :

Gull wing

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

600mA

Lead Free :

Lead Free

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Gate to Source Voltage (Vgs) :

6V

Pin Count :

3

Number of Elements :

1

Fall Time (Typ) :

5 ns

Series :

TrenchFET®

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Terminal Position :

Dual

Threshold Voltage :

800mV

ECCN Code :

EAR99

Length :

1.58mm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

5 ns

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)