SI1012CR-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Length :

1.68mm

Turn On Delay Time :

11 ns

Vgs (Max) :

±8V

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

396m Ω @ 600mA, 4.5V

Width :

860μm

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

11 ns

Turn-Off Delay Time :

26 ns

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 8V

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation :

240mW

Number of Channels :

1

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

800μm

Lead Free :

Lead Free

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Series :

TrenchFET®

Power Dissipation-Max :

240mW Ta

Max Junction Temperature (Tj) :

150°C

Rise Time :

16ns

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Weight :

2.012816mg

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Threshold Voltage :

400mV

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

630mA

Transistor Application :

SWITCHING

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Package / Case :

SC-75, SOT-416

Resistance :

396mOhm

Number of Pins :

3

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V