SFP9Z34
- Mfr.Part #
- SFP9Z34
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 18A TO220-3
- Stock
- 40,106
- In Stock :
- 40,106
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 60V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Unknown
- Drain-source On Resistance-Max :
- 0.14Ohm
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 82W Tc
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 7A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- FET Type :
- P-Channel
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 18A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.155pF @ 25V
- Avalanche Energy Rating (Eas) :
- 555 mJ
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Datasheets
- SFP9Z34

P-Channel Tube 140m Ω @ 7A, 10V ±30V 1.155pF @ 25V 38nC @ 10V 60V TO-220-3
SFP9Z34 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 555 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.155pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 18A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SFP9Z34 Features
the avalanche energy rating (Eas) is 555 mJ
based on its rated peak drain current 72A.
a 60V drain to source voltage (Vdss)
SFP9Z34 Applications
There are a lot of Rochester Electronics, LLC
SFP9Z34 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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