SFF9250L
- Mfr.Part #
- SFF9250L
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 12.6A TO3PF
- Stock
- 360
- In Stock :
- 360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.25pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 5V
- Terminal Finish :
- NOT SPECIFIED
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Current - Continuous Drain (Id) @ 25°C :
- 12.6A Tc
- Drain Current-Max (Abs) (ID) :
- 12.6A
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Case Connection :
- Isolated
- FET Type :
- P-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 200V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 90W Tc
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 50.4A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-3P-3 Full Pack
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Pin Count :
- 3
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Avalanche Energy Rating (Eas) :
- 990 mJ
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.23Ohm
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 6.3A, 5V
- Datasheets
- SFF9250L

P-Channel Tube 230m Ω @ 6.3A, 5V ±20V 3.25pF @ 25V 120nC @ 5V 200V TO-3P-3 Full Pack
SFF9250L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 990 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3.25pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 12.6A.There is a peak drain current of 50.4A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V).
SFF9250L Features
the avalanche energy rating (Eas) is 990 mJ
based on its rated peak drain current 50.4A.
a 200V drain to source voltage (Vdss)
SFF9250L Applications
There are a lot of Rochester Electronics, LLC
SFF9250L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SFF9250L | onsemi | 360 | MOSFET P-CH 200V 12.6A TO3PF |
















