SBSS84LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Mounting Type :

Surface Mount

Power Dissipation :

225mW

Published :

2012

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

5V

ECCN Code :

EAR99

Height :

1.11mm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 5V

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 10V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

-130mA

Turn-Off Delay Time :

12 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

9.7ns

Factory Lead Time :

11 Weeks

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Drain to Source Breakdown Voltage :

-50V

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

130mA Ta

Fall Time (Typ) :

1.7 ns

Radiation Hardening :

No

Turn On Delay Time :

3.6 ns

FET Type :

P-Channel

Power Dissipation-Max :

225mW Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

50V