SBCX19LT1G
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- Mfr.Part #
- SBCX19LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 2,373
- In Stock ：
- 2,373
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.01mm
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Length :
- 3.04mm
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 620mV
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- hFE Min :
- 100
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Base Part Number :
- BCX19
- Mounting Type :
- Surface Mount
- Published :
- 2005
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Width :
- 1.4mm
- Datasheets
- SBCX19LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBCX19LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 620mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 500mA volts.
SBCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBCX19LT1G Applications
There are a lot of ON Semiconductor
SBCX19LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| SBCX19LT1 | onsemi | 26,630 | TRANS NPN 45V 0.5A SOT23-3 |
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