SBCX19LT1
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- Mfr.Part #
- SBCX19LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 26,630
- In Stock ：
- 26,630
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BCX19
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Published :
- 2005
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Series :
- Automotive, AEC-Q101
- Height :
- 1.01mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 620mV
- Length :
- 3.04mm
- Width :
- 1.4mm
- Continuous Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SBCX19LT1
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBCX19LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 620mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 620mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 500mA volts.
SBCX19LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
SBCX19LT1G Applications
There are a lot of ON Semiconductor
SBCX19LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| SBCX19LT1G | onsemi | 2,373 | TRANS NPN 45V 0.5A SOT23-3 |
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