S29WS512R0SBHW000

Manufacturer :

Infineon Technologies

Product Category :

Memory

Packaging :

Tray

Width :

8mm

Memory Type :

Non-Volatile

Write Cycle Time - Word, Page :

60ns

Memory Density :

536870912 bit

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1mm

Memory Width :

16

Memory Format :

Flash

Operating Temperature :

-25°C~85°C TA

Boot Block :

BOTTOM/TOP

Programming Voltage :

1.8V

Package / Case :

84-VFBGA

JESD-30 Code :

R-PBGA-B84

RoHS Status :

ROHS3 Compliant

Access Time :

80ns

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

1.95V

Length :

11.6mm

Organization :

32MX16

Memory Size :

512Mb 32M x 16

Terminal Position :

BOTTOM

Memory Interface :

Parallel

Series :

WS-R

Voltage - Supply :

1.7V~1.95V

Operating Mode :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Clock Frequency :

104MHz

Surface Mount :

yes

Supply Voltage :

1.8V

Mounting Type :

Surface Mount

Number of Functions :

1

Number of Terminations :

84