S29CD016J0MQFM110

Manufacturer :

Infineon Technologies

Product Category :

Memory

Operating Mode :

ASYNCHRONOUS

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Organization :

512KX32

HTS Code :

8542.32.00.51

ECCN Code :

EAR99

Voltage - Supply :

1.65V~2.75V

Access Time :

54ns

Time@Peak Reflow Temperature-Max (s) :

40

Memory Type :

Non-Volatile

Number of Terminations :

80

Power Supplies :

1.8/2.62.6V

Operating Temperature :

-40°C~125°C TA

Memory Format :

Flash

Standby Current-Max :

0.00006A

Factory Lead Time :

7 Weeks

Package / Case :

80-BQFP

Memory Interface :

Parallel

Memory Density :

16777216 bit

Number of Functions :

1

Width :

14mm

Write Cycle Time - Word, Page :

60ns

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

2.75V

Supply Voltage :

2.6V

Length :

20mm

Packaging :

Tray

JESD-609 Code :

e3

JESD-30 Code :

R-PQFP-G80

Supply Current-Max :

0.09mA

Boot Block :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Command User Interface :

yes

Data Polling :

yes

Clock Frequency :

56MHz

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Height Seated (Max) :

3.35mm

Mounting Type :

Surface Mount

Memory Size :

16Mb 512K x 32

Series :

CD-J

Ready/Busy :

yes

Programming Voltage :

2.7V

Memory Width :

32

Number of Sectors/Size :

1630

Common Flash Interface :

yes

Surface Mount :

yes

Sector Size :

2K16K

Supply Voltage-Min (Vsup) :

2.5V

Terminal Position :

QUAD

Toggle Bit :

yes

Peak Reflow Temperature (Cel) :

260