S1M-E3/61T

Manufacturer :

Vishay

Product Category :

Diodes - Rectifiers - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Capacitance @ Vr, F :

12pF @ 4V 1MHz

Terminal Form :

C BEND

Voltage - Forward (Vf) (Max) @ If :

1.1V @ 1A

Radiation Hardening :

No

Diode Type :

Standard

Element Configuration :

Single

JESD-609 Code :

e3

Current - Reverse Leakage @ Vr :

5µA @ 1000V

Max Forward Surge Current (Ifsm) :

30A

Base Part Number :

S1M

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Pbfree Code :

yes

Width :

2.79mm

Voltage - DC Reverse (Vr) (Max) :

1000V

Reverse Voltage :

1kV

Peak Non-Repetitive Surge Current :

30A

Additional Feature :

LOW LEAKAGE CURRENT

Terminal Position :

Dual

REACH SVHC :

Unknown

Average Rectified Current :

1A

Max Repetitive Reverse Voltage (Vrrm) :

1kV

Mount :

Surface Mount

Number of Terminations :

2

Output Current :

1A

ECCN Code :

EAR99

Max Reverse Voltage (DC) :

1kV

Current Rating :

1A

Time@Peak Reflow Temperature-Max (s) :

30

Max Operating Temperature :

150°C

Number of Elements :

1

Lead Free :

Lead Free

Pin Count :

2

Forward Voltage :

1.1V

Capacitance :

12pF

Length :

4.4958mm

Contact Plating :

Tin

Operating Temperature - Junction :

-55°C~150°C

Forward Current :

1A

HTS Code :

8541.10.00.80

Voltage :

1kV

Package / Case :

DO-214AC, SMA

Published :

2008

Current :

1A

Packaging :

Tape and Reel (TR)

Number of Pins :

2

Voltage - Rated DC :

1kV

Max Surge Current :

30A

Reverse Recovery Time :

1.8 μs

Peak Reverse Current :

5μA

Min Operating Temperature :

-55°C

Factory Lead Time :

19 Weeks

Peak Reflow Temperature (Cel) :

260

Height :

2.29mm

Speed :

Standard Recovery >500ns, > 200mA (Io)

Recovery Time :

1.8 μs

RoHS Status :

ROHS3 Compliant

Diode Element Material :

SILICON