S1M-E3/5AT

Manufacturer :

Vishay

Product Category :

Diodes - Rectifiers - Single

Average Rectified Current :

1A

Pbfree Code :

yes

REACH SVHC :

Unknown

Additional Feature :

LOW LEAKAGE CURRENT

Number of Pins :

2

Max Surge Current :

30A

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Current :

1A

Min Operating Temperature :

-55°C

Width :

2.79mm

Diode Type :

Standard

Terminal Form :

C BEND

Speed :

Standard Recovery >500ns, > 200mA (Io)

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Terminal Position :

Dual

Max Repetitive Reverse Voltage (Vrrm) :

1kV

Lead Free :

Lead Free

Package / Case :

DO-214AC, SMA

Height :

2.29mm

HTS Code :

8541.10.00.80

Peak Non-Repetitive Surge Current :

30A

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Factory Lead Time :

11 Weeks

Length :

4.5mm

Reverse Voltage :

1kV

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Voltage :

1.1V

Voltage :

1kV

Number of Elements :

1

Peak Reverse Current :

5μA

Capacitance @ Vr, F :

12pF @ 4V 1MHz

Forward Current :

1A

Max Reverse Voltage (DC) :

1kV

Peak Reflow Temperature (Cel) :

260

Capacitance :

12pF

Voltage - Forward (Vf) (Max) @ If :

1.1V @ 1A

Max Operating Temperature :

150°C

Recovery Time :

1.8 μs

Published :

2011

Voltage - DC Reverse (Vr) (Max) :

1000V

Reverse Recovery Time :

1.8 μs

Operating Temperature - Junction :

-55°C~150°C

Base Part Number :

S1M

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Current - Reverse Leakage @ Vr :

5µA @ 1000V

Pin Count :

2

Max Forward Surge Current (Ifsm) :

30A

Diode Element Material :

SILICON

JESD-609 Code :

e3