RZL035P01TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1W Ta

Fall Time (Typ) :

180 ns

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Transistor Application :

SWITCHING

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 6V

Gate to Source Voltage (Vgs) :

10V

Power Dissipation :

1W

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Published :

2007

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-12V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Turn On Delay Time :

10 ns

Number of Terminations :

6

Operating Temperature :

150°C TJ

Resistance :

36mOhm

Vgs (Max) :

±10V

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

36m Ω @ 3.5A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Pbfree Code :

yes

ECCN Code :

EAR99

Turn-Off Delay Time :

350 ns

Package / Case :

6-SMD, Flat Leads

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

50ns

Continuous Drain Current (ID) :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pin Count :

6

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 1mA