RYE002N05TCL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Transistor Element Material :

SILICON

Published :

2011

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

2.8Ohm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

0.9V 4.5V

Vgs (Max) :

±8V

Drain Current-Max (Abs) (ID) :

0.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

800mV @ 1mA

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Power Dissipation-Max :

150mW Ta

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

50V

Operating Temperature :

150°C TJ

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

200mA

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 200mA, 4.5V

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

50V

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-75, SOT-416

Lead Free :

Lead Free