RW4E065GNTCL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

Power MOSFET

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

30 V

Series :

-

Channel Type :

N Channel

Channel Mode :

Enhancement

Rise Time :

3 ns

Subcategory :

MOSFETs

Power Dissipation (Max) :

1.5W (Ta)

Product Status :

Active

Package :

Digi-Reel?

Rds On (Max) @ Id, Vgs :

22.5mOhm @ 6.5A, 10V

Package / Case :

6-PowerUFDFN

Packaging :

Cut Tape

Vgs (Max) :

±20V

Manufacturer :

Rohm Semiconductor

Supplier Device Package :

DFN1616-7T

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Transistor Polarity :

N-Channel

Power Dissipation :

1.5W

Minimum Operating Temperature :

- 55 C

Operating Temperature :

150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Style :

SMD/SMT

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

4.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

260 pF @ 15 V

Number of Channels :

1 Channel

Package Type :

HEML1616L7

FET Type :

N-Channel

Mounting Type :

Surface Mount

FET Feature :

-

Brand :

Rohm Semiconductor

Qualification :

-

Continuous Drain Current Id :

6.5A