RUS100N02TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

12m Ω @ 10A, 4.5V

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 10V

Operating Temperature :

150°C TJ

Published :

2014

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Threshold Voltage :

1V

Power Dissipation-Max :

2W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs (Max) :

±10V

ECCN Code :

EAR99

Resistance :

8mOhm

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

REACH SVHC :

No SVHC

Reach Compliance Code :

not_compliant

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

36A

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

10A

Terminal Form :

Gull wing