RUQ050N02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.038Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

20 Weeks

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

6

JESD-609 Code :

e1

Number of Pins :

6

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

70 ns

Power Dissipation :

1.25W

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Fall Time (Typ) :

100 ns

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

1.3V @ 1mA

Drain Current-Max (Abs) (ID) :

5A

Pulsed Drain Current-Max (IDM) :

10A

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Vgs (Max) :

±10V

Continuous Drain Current (ID) :

5A

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2015

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

30m Ω @ 5A, 4.5V

Power Dissipation-Max :

1.25W Ta

Mounting Type :

Surface Mount

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Rise Time :

25ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5A Ta