RUL035N02TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

40 ns

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

1V @ 1mA

Number of Elements :

1

Number of Terminations :

6

JESD-609 Code :

e2

Published :

2013

Pin Count :

6

Rise Time :

20ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.5A, 4.5V

Height :

820μm

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Width :

1.8mm

Terminal Finish :

Tin/Copper (Sn/Cu)

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V

Number of Pins :

6

Power Dissipation-Max :

320mW Ta

Fall Time (Typ) :

50 ns

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.053Ohm

Lead Free :

Lead Free

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Single

FET Type :

N-Channel

Vgs (Max) :

±10V

Continuous Drain Current (ID) :

3.5A

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

Length :

2.1mm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1W

Package / Case :

6-SMD, Flat Leads

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Factory Lead Time :

20 Weeks