RTU002P02T106
- Mfr.Part #
- RTU002P02T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 250MA UMT3
- Stock
- 5,858
- In Stock :
- 5,858
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Copper, Silver, Tin
- Factory Lead Time :
- 7 Weeks
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Threshold Voltage :
- -700mV
- Gate to Source Voltage (Vgs) :
- 12V
- Operating Temperature :
- 150°C TJ
- Published :
- 2003
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 35 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±12V
- Pbfree Code :
- yes
- Resistance :
- 1.5Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Nominal Vgs :
- -700 mV
- Drain to Source Breakdown Voltage :
- -20V
- Lead Free :
- Lead Free
- Power Dissipation :
- 200mW
- Terminal Finish :
- TIN SILVER COPPER
- Fall Time (Typ) :
- 6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- REACH SVHC :
- No SVHC
- Voltage :
- 20V
- Current Rating :
- -200mA
- Voltage - Rated DC :
- -20V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Rise Time :
- 6ns
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 200mW Ta
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Current :
- 25A
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 250mA
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 250mA, 4.5V
- Turn On Delay Time :
- 9 ns
- Datasheets
- RTU002P02T106

P-Channel Tape & Reel (TR) 1.5 Ω @ 250mA, 4.5V ±12V 50pF @ 10V SC-70, SOT-323
RTU002P02T106 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 50pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -700mV.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
RTU002P02T106 Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -700mV
RTU002P02T106 Applications
There are a lot of ROHM Semiconductor
RTU002P02T106 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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