RTR025P02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Surface Mount :

yes

Published :

2004

Drain-source On Resistance-Max :

0.105Ohm

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±12V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1W Ta

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

2.5A

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.5A, 4.5V

JESD-609 Code :

e1

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 1mA

Factory Lead Time :

19 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

ECCN Code :

EAR99

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Package / Case :

SC-96