RSM002N06T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

250mA

Turn-Off Delay Time :

18 ns

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Terminal Form :

Flat

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

28 ns

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

250mA Ta

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2010

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Elements :

1

Factory Lead Time :

16 Weeks

JESD-609 Code :

e2

Rise Time :

5ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Number of Pins :

3

Number of Terminations :

3

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

0.25A

Vgs (Max) :

±20V

Radiation Hardening :

No

Lead Free :

Lead Free

Package / Case :

SOT-723

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Power Dissipation-Max :

150mW Ta

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

Turn On Delay Time :

3.5 ns

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)