RSH100N03TB1

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Mfr.Part #
RSH100N03TB1
Manufacturer
ROHM Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 10A 8SOP
Stock
52,316
In Stock :
52,316

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
8
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
2W
Input Capacitance (Ciss) (Max) @ Vds :
1070pF @ 10V
Rds On (Max) @ Id, Vgs :
13.3m Ω @ 10A, 10V
FET Type :
N-Channel
Published :
2009
Continuous Drain Current (ID) :
10A
Drain to Source Breakdown Voltage :
30V
Mount :
Surface Mount
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 5V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Power Dissipation-Max :
2W Ta
Datasheets
RSH100N03TB1
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSH100N03TB1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), RSH100N03TB1 pinout, RSH100N03TB1 datasheet PDF, RSH100N03TB1 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSH100N03TB1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RSH100N03TB1


N-Channel Tape & Reel (TR) 13.3m Ω @ 10A, 10V ±20V 1070pF @ 10V 20nC @ 5V 8-SOIC (0.154, 3.90mm Width)

RSH100N03TB1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1070pF @ 10V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).

RSH100N03TB1 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage


RSH100N03TB1 Applications


There are a lot of ROHM Semiconductor
RSH100N03TB1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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