RSH070P05TB1

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Mfr.Part #
RSH070P05TB1
Manufacturer
ROHM Semiconductor
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 45V 7A 8SOP
Stock
1,221
In Stock :
1,221

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
2W
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 10V
Drain to Source Voltage (Vdss) :
45V
FET Type :
P-Channel
Max Operating Temperature :
150°C
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Drain to Source Breakdown Voltage :
-45V
Current - Continuous Drain (Id) @ 25°C :
7A Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Supplier Device Package :
8-SOP
Input Capacitance :
4.1nF
Rds On Max :
27 mΩ
Gate Charge (Qg) (Max) @ Vgs :
47.6nC @ 5V
Packaging :
Tape and Reel (TR)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs :
27mOhm @ 7A, 10V
Mount :
Surface Mount
Drain to Source Resistance :
28mOhm
Number of Pins :
8
Power Dissipation-Max :
2W Ta
Continuous Drain Current (ID) :
7A
Mounting Type :
Surface Mount
Published :
2009
Datasheets
RSH070P05TB1
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSH070P05TB1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Mounting Type:Surface Mount, RSH070P05TB1 pinout, RSH070P05TB1 datasheet PDF, RSH070P05TB1 amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSH070P05TB1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RSH070P05TB1


P-Channel Tape & Reel (TR) 27mOhm @ 7A, 10V ±20V 4100pF @ 10V 47.6nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width)

RSH070P05TB1 Overview


The maximum input capacitance of this device is 4100pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=-45V, and ID flows to VDS at -45VVDS, the drain-source breakdown voltage is -45V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 28mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 45V in order to operate.Using drive voltage (4V 10V), this device helps reduce its power consumption.

RSH070P05TB1 Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of -45V voltage
single MOSFETs transistor is 28mOhm
a 45V drain to source voltage (Vdss)


RSH070P05TB1 Applications


There are a lot of ROHM Semiconductor
RSH070P05TB1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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