RSE002N06TL
- Mfr.Part #
- RSE002N06TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 250MA EMT3
- Stock
- 1,580
- In Stock :
- 1,580
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 60V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 15pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Package / Case :
- SC-75, SOT-416
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN SILVER COPPER
- Continuous Drain Current (ID) :
- 250mA
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- DS Breakdown Voltage-Min :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 250mA Ta
- Power Dissipation-Max :
- 150mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 28 ns
- Rds On (Max) @ Id, Vgs :
- 2.4 Ω @ 250mA, 10V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 3.5 ns
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 18 ns
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Pin Count :
- 3
- Rise Time :
- 5ns
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Published :
- 2010
- FET Type :
- N-Channel
- Datasheets
- RSE002N06TL

N-Channel Tape & Reel (TR) 2.4 Ω @ 250mA, 10V ±20V 15pF @ 25V 60V SC-75, SOT-416
RSE002N06TL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 15pF @ 25V.This device conducts a continuous drain current (ID) of 250mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.25A.When the device is turned off, a turn-off delay time of 18 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 10V volts (2.5V 10V).
RSE002N06TL Features
a continuous drain current (ID) of 250mA
the turn-off delay time is 18 ns
a 60V drain to source voltage (Vdss)
RSE002N06TL Applications
There are a lot of ROHM Semiconductor
RSE002N06TL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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