RS1G201ATTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

78

Vgs (Max) :

±20V

Operating Temp Range :

-55C to 150C

Package / Case :

8-PowerTDFN

FET Feature :

-

Rds On (Max) @ Id, Vgs :

5.2mOhm @ 20A, 10V

Number of Elements :

1

Number of Elements per Chip :

1

Drain to Source Voltage (Vdss) :

40 V

FET Type :

P-Channel

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Operating Temperature :

-55°C ~ 150°C (TJ)

Technology :

MOSFET (Metal Oxide)

Power Dissipation :

40

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Channel Mode :

Enhancement

Transistor Polarity :

P-Channel

Mounting :

Surface Mount

Drain-Source On-Volt :

40(V)

Current - Continuous Drain (Id) @ 25°C :

20A (Ta), 78A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

6890 pF @ 20 V

Package Type :

HSOP EP

Gate-Source Voltage (Max) :

±20(V)

Gate Charge (Qg) (Max) @ Vgs :

130 nC @ 10 V

Supplier Device Package :

8-HSOP

Minimum Operating Temperature :

-

Pin Count :

8

Series :

-

Type :

Power MOSFET

Mounting Style :

SMD/SMT

Product Status :

Active

Rad Hardened :

No

Continuous Drain Current :

20(A)

Operating Temperature Classification :

Military

Channel Type :

P Channel

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Power Dissipation (Max) :

3W (Ta), 40W (Tc)

MSL :

-

Qualification :

-

Maximum Operating Temperature :

+ 150 C

Base Product Number :

RS1G

Polarity :

P