RS1G180MNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 30W Tc

Drain to Source Voltage (Vdss) :

40V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0092Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 18A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

18A

ECCN Code :

EAR99

Number of Terminations :

5

Transistor Application :

SWITCHING

Mount :

Surface Mount

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Surface Mount

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1293pF @ 20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

18A Ta 80A Tc

Pulsed Drain Current-Max (IDM) :

72A

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V