RS1G150MNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 20V

DS Breakdown Voltage-Min :

40V

Number of Terminations :

5

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0133Ohm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

10.6m Ω @ 15A, 10V

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Number of Pins :

8

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Power Dissipation-Max :

3W Ta 25W Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Factory Lead Time :

20 Weeks

Case Connection :

DRAIN

Continuous Drain Current (ID) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Position :

Dual

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant