RRH100P03GZETB
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- Mfr.Part #
- RRH100P03GZETB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 10A 8SOP
- Stock
- 25,605
- In Stock ：
- 25,605
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.75mm
- Rds On (Max) @ Id, Vgs :
- 12.6m Ω @ 10A, 10V
- Length :
- 5mm
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 100 ns
- Power Dissipation-Max :
- 650mW Ta
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- -30V
- Width :
- 3.9mm
- Weight :
- 850.995985mg
- Rise Time :
- 60ns
- Turn-Off Delay Time :
- 150 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±20V
- Published :
- 2012
- Turn On Delay Time :
- 25 ns
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Factory Lead Time :
- 20 Weeks
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 10A
- Datasheets
- RRH100P03GZETB
P-Channel Tape & Reel (TR) 12.6m Ω @ 10A, 10V ±20V 3600pF @ 10V 68nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
RRH100P03GZETB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3600pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 150 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RRH100P03GZETB Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
a 30V drain to source voltage (Vdss)
RRH100P03GZETB Applications
There are a lot of ROHM Semiconductor
RRH100P03GZETB applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| RRH100P03TB1 | ROHM Semiconductor | 18,243 | MOSFET P-CH 30V 10A 8SOP |
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| RRH140P03TB1 | ROHM Semiconductor | 2,681 | MOSFET P-CH 30V 14A 8SOP |
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