RRF015P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2012

Fall Time (Typ) :

13 ns

Turn On Delay Time :

12 ns

FET Type :

P-Channel

Transistor Application :

SWITCHING

Mount :

Surface Mount

JESD-609 Code :

e2

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

320mW Ta

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.5A

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

3

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Length :

2.1mm

Width :

1.8mm

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rise Time :

8ns

Number of Elements :

1

Drain-source On Resistance-Max :

0.16Ohm

Pbfree Code :

yes

Transistor Element Material :

SILICON

Pin Count :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 10V

Number of Terminations :

3

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

10

Height :

820μm

Package / Case :

3-SMD, Flat Lead