RQ6P015SPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

322nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Vgs (Max) :

±20V

Number of Pins :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.5A

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Number of Elements :

1

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Factory Lead Time :

20 Weeks

FET Type :

P-Channel

Resistance :

350mOhm

Terminal Form :

Gull wing

Threshold Voltage :

-2.5V

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

470m Ω @ 1.5A, 10V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

600mW Ta

Transistor Element Material :

SILICON

Number of Terminations :

6

Terminal Position :

Dual

REACH SVHC :

No SVHC